DC8550S discrete semiconductors r dc components co., ltd. technical specifications of pnp epitaxial planar transistor characteristic symbol rating unit collector-base voltage vcbo -25 v collector-emitter voltage vceo -20 v emitter-base voltage vebo -5 v collector current ic -700 ma total power dissipation pd 625 mw junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo -25 - - v ic=-10ma collector-emitter breakdown voltage bvceo -20 - - v ic=-1ma emitter-base breakdown volatge bvebo -5 - - v ie=-10ma collector cutoff current icbo - - -1 ma vcb =-20v collector-emitter saturation voltage (1) vce(sat) - - -0.6 v ic=-0.5a, ib=-50ma base-emitter on voltage (1) vbe(on) - - -1 v ic=-150ma, vce=-1v dc current gain(1) hfe1 85 - 500 - ic=-150ma, vce=-1v hfe2 - 170 - - ic=-500ma, vce=-1v transition frequency ft 150 - - mhz ic=-20ma, vce =-10v, f=100mhz output capacitance cob - - 10 pf vcb =-10v, f=1mhz electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2% description designed for general purpose amplifier applications. pinning 1 = emitter2 = base 3 = collector to-92 .022(0.56).014(0.36) .050 (1.27) .148(3.76).132(3.36) typ .190(4.83).170(4.33) .100 (2.54) typ .050 (1.27) typ .022(0.56).014(0.36) .190(4.83).170(4.33) .500 (12.70) min 2o typ 5o typ. 2o typ 3 2 1 5o typ. dimensions in inches and (millimeters) rank b c d e range 85~160 100~200 150~300 250~500 classification of hfe1
fig.6 - pd-ta 0 100 200 300 400 500 600 700 0 20 40 60 80 100 120 140 160 ambient temperature-ta( o c) power dissipation-pd(mw) fig.2 - saturation voltage & collector current 0.01 0.1 1 0.01 0.1 1 10 100 1000 collector current (ma) saturation voltage (v) v ce(sat) @ i c =10i b fig.1 - current gain & collector current 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 collector current (ma) hfe v ce =1v fig.3 - on voltage & collector current 0.1 1 0.01 0.1 1 10 100 1000 collector current (ma) on voltage (v) v be(on) @ v ce =1v fig.5 - capacitance & reverse-biased voltage 1 10 100 0.1 1 10 100 reverse-biased voltage (v) capacitance (pf) cob fig.4 - cutoff frequency & collector current 1 10 100 1000 1 10 100 1000 collector current (ma) cutoff frequency (mhz) v ce =10v rating and characteristic curves of DC8550S r dc components co., ltd.
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